Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Smith, Matthew S (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257SE27081, C257SE21645
Reexamination Certificate
active
07868370
ABSTRACT:
A nonvolatile memory integrated circuit has a semiconductor substrate and a nonvolatile memory device on the semiconductor substrate. The device has a transistor and a capacitor on the semiconductor substrate, and a shared floating gate connecting the gate regions of the transistor and the capacitor. The transistor has at least a doping region defining the source and drain regions, as well as three other doping regions overlapping the source and drain regions. Also disclosed are a nonvolatile memory circuit with multiple such nonvolatile memory device, and methods for making the nonvolatile memory circuit with one or more such nonvolatile memory devices.
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Lien Shih-Chin
Lin Cheng-Chi
Wu Shyi-Yuan
Yeh Chin-Pen
Diallo Mamadou
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Smith Matthew S
Suzue Kenta
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