Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-05-21
2011-12-27
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S024000, C257S250000, C257S251000, C257S274000, C257S369000, C257SE21632, C257SE21633, C257SE21634, C257SE21641, C257SE27064, C977S762000, C977S938000
Reexamination Certificate
active
08084308
ABSTRACT:
Nanowire-based devices are provided. In one aspect, a field-effect transistor (FET) inverter is provided. The FET inverter includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided.
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Chang Josephine
Chang Paul
Guillorn Michael A.
Sleight Jeffrey
Alexanian Vazken
Chang, LLC Michael J.
International Business Machines - Corporation
Joy Jeremy
Smith Zandra
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