Single gate inverter nanowire mesh

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257S024000, C257S250000, C257S251000, C257S274000, C257S369000, C257SE21632, C257SE21633, C257SE21634, C257SE21641, C257SE27064, C977S762000, C977S938000

Reexamination Certificate

active

08084308

ABSTRACT:
Nanowire-based devices are provided. In one aspect, a field-effect transistor (FET) inverter is provided. The FET inverter includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided.

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