Single-ended sensing using global bit lines for DRAM

Details Single-ended sensing using global bit lines for DRAM Single-ended sensing using global bit lines for DRAM

1995-06-06

1997-04-29

Nguyen, Tan T.

Static information storage and retrieval

Systems using particular element

Capacitors

365207, 365203, 327 51, 327 52, G11C 706

Patent

active

056255888

ABSTRACT:
An integrated circuit dynamic memory device is described which stores data in memory cells as a charge on a capacitor. The memory cells can be selectively connected to a digit line. Sensing circuitry, including both p-sense and n-sense amplifiers, is connected to the digit line for sensing data stored in the memory cells. Equalization circuitry is described to equalize the sense amplifiers by connecting both nodes of the sense amplifiers to the digit line prior to sensing data stored on the memory cell.

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