Single-ended read and differential write scheme

Details Single-ended read and differential write scheme Single-ended read and differential write scheme

2008-08-13

2010-10-12

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189140, C365S230050

Reexamination Certificate

active

07813163

ABSTRACT:
A method to read and write at least one static memory cell is provided, said cell comprising a cross-coupled inverter pair and two pass-devices wherein said method is characterized in that during read only one of the two pass-devices is selected, while for write both pass-devices are selected. Furthermore, a circuit to read and write at least one static memory cell is described, said cell comprising a cross-coupled inverter pair and two pass-devices. Said circuit is characterized in that for each pass-device of the cell an individual wordline is connected with a gate of the particular pass-device, wherein both wordlines are selected for write and a single wordline is selected for read.

REFERENCES:
patent: 5742557 (1998-04-01), Gibbins et al.
patent: 7504695 (2009-03-01), Martelloni et al.
patent: 7626851 (2009-12-01), Behrends
patent: 7675794 (2010-03-01), Behrends
patent: 2005/0281109 (2005-12-01), Martelloni et al.

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