Single ended dual port memory cell

Details Single ended dual port memory cell Single ended dual port memory cell

1997-01-30

1999-12-21

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Flip-flop

36523005, G11C 1100

Patent

active

060057955

ABSTRACT:
A single ended dual port memory cell is described. A bit of data received from one of the first and second ports can be stored. Each of the first and second ports can simultaneously detect the stored bit.
A method of reading the contents of a dual port memory cell which has a Beta Ratio less than 1.5 is also described. A wordline is associated with a selected port of the memory cell. The wordline is coupled to a gate device of the memory cell for controlling communication between the memory cell and a bitline. The gate device has a first conductance at a first wordline voltage and a second conductance at a second wordline voltage. The second conductance is less than the first conductance. A port of the cell is selected by applying a select voltage to the associated wordline. The select voltage is approximately the same as the second wordline voltage. The cell contents are then retrieved from the bitline.

REFERENCES:
patent: 5289432 (1994-02-01), Dhong
patent: 5424995 (1995-06-01), Miyazaki
patent: 5428574 (1995-06-01), Kuo
patent: 5434818 (1995-07-01), Byers
Helmut Liedl and Kurt Marquardt, "Dual-Port RAM for Cost-attractive Multi-Microcontroller Systems", Siemans Components, vol. 25, No. 5, pp. 163-166 (Oct. 25, 1990).
Feipei Lai, Ying Lang Chuang and Shyh Jong Chen, "A New Design Methodology for Multiport SRAM Cell", IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, vol. 41, No. 11, pp. 677-685, (Nov. 1994).
Ukita, et al., A Single-Bit-Line Cross-Point Cell Activation (SPCA) Architecture for Ultra-Low-Power SRAM's, IEEE Journal of Solid-State Circuits, vol. 28, No. 11, Nov. 1993, pp. 1114-1118.

Affiliated with

Also associated with

Rating

Single ended dual port memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single ended dual port memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single ended dual port memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-511645