Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-01-10
2006-01-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S020000
Reexamination Certificate
active
06984845
ABSTRACT:
A single-electron transistor using nanoparticles is provided. The single-electron transistor includes a first insulating film, a gate electrode patterned in a stripe form on the first insulating film, a second insulating film formed on exposed surfaces of the first insulating film and the gate electrode in such a way that a stepped portion is formed at a boundary between the gate electrode and the first insulating film, first and second electrodes formed on the second insulating film in such a way that a groove is formed at the stepped portion to expose a surface of the second insulating film, the first and second electrodes being separated from each other by the groove, and nanoparticles positioned at the groove and contacting with the first and second electrodes, the nanoparticles being channels for electron transfer. The single-electron transistor is manufactured using previously prepared nanoparticles and a general semiconductor process, thereby enabling low cost, mass production and operation at room temperature.
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D.V.Averin et al., “Abstract of Coulomb Blockade of Single-Electron Tunneling, and Coherent Oscillations in Small Tunnel Junctions”, Journal of Low Temperature Physics, 1986, vol. 62, No. 3-4.
Buchanan & Ingersoll PC
Jackson Jerome
Samsung Electronics Co,. Ltd.
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