Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-09-12
2006-09-12
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S680000, C977S773000, C977S784000
Reexamination Certificate
active
07105425
ABSTRACT:
A semiconductor device with a superlattice and method of making same includes forming a layer of amorphous silicon over a substrate, and forming a layer of nanocrystals by laser thermal annealing the layer of amorphous silicon. A gate dielectric is formed between the layer of amorphous silicon and the substrate. A dielectric layer is formed on the layer of amorphous silicon. The steps of forming the layer of amorphous silicon and forming the dielectric layer can be repeated. The thickness of the dielectric layer is between about 25 to 40 angstroms, and the thickness of the amorphous silicon layer is between about 30 to 50 angstroms. The average diameter of the nanocrystals is less than 40 angstroms.
REFERENCES:
patent: 5619044 (1997-04-01), Makita et al.
patent: 5663571 (1997-09-01), Ugajin
patent: 5679962 (1997-10-01), Kizuki
patent: 5714766 (1998-02-01), Chen et al.
patent: 5731598 (1998-03-01), Kado et al.
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 6060743 (2000-05-01), Sugiyama et al.
patent: 6165842 (2000-12-01), Shin et al.
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6274903 (2001-08-01), Nomoto et al.
patent: 6306610 (2001-10-01), Bawendi et al.
patent: 6413819 (2002-07-01), Zafar et al.
patent: 6461917 (2002-10-01), Nomoto et al.
patent: 6576532 (2003-06-01), Jones et al.
patent: 6690059 (2004-02-01), Lojek
patent: 6784103 (2004-08-01), Rao et al.
patent: 2003/0102469 (2003-06-01), Jones et al.
patent: 2006/0060915 (2006-03-01), Lojek
patent: 09083075 (1997-03-01), None
Grom et al, Ordering and Self-Organization in Nanocrystalline Silicon, Sep. 21, 2000, Nature 407, 358-361.
Wang et al, Patterned Distribution of Silicon Nanocrystalls Prepared by Pulsed Laser Interference Crystallization of an Ultrathin A-SI:H Single Layer, Jan. 20, 2003, J. Phys.: Condens. Matter 15 (2003) 609-615.
Advanced Micro Devices , Inc.
Schillinger Laura M.
LandOfFree
Single electron devices formed by laser thermal annealing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single electron devices formed by laser thermal annealing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single electron devices formed by laser thermal annealing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3615767