Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-31
2010-12-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S320000, C438S217000, C438S228000
Reexamination Certificate
active
07847349
ABSTRACT:
In accordance with exemplary embodiments, a Fast Fourier Transform (FFT) architecture includes elements that perform a radix-2 FFT butterfly in one processor clock cycle at steady state. Some exemplary implementations of the FFT architecture incorporate register and data path elements that relieve memory bandwidth limitations by pairing operands consumed by and results generated by two adjacent butterflies in the overall N-point FFT operation.
REFERENCES:
patent: 6662367 (2003-12-01), Dapper et al.
Agere Systems Inc.
Pham Long
Rao Steven H
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