Single crystal silicon

Details Single crystal silicon Single crystal silicon

1990-08-22

1991-11-26

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

148 332, 156605, H01L 2936

Patent

active

050679899

ABSTRACT:
Single crystal silicon for a substrate of semiconductor integrated circuits is disclosed. Cu, Fe, Ni and Cr are contained as impurities in a concentration smaller than 0.1 ppta, respectively, and the total content of the impurities is less than 0.4 ppta. Oxygen-induced stacking faults are reduced to an absolute minimum.

REFERENCES:
Journal of Electrochem. Soc., vol. 119, No. 2, Feb. 1972, New York, U.S.; D. I. Pomerantz: "Effects of Grown-In and Process-Induced Defects in Single Crystal Silicon".
Journal of Electrochem. Soc., vol. 119, No. 9, Sep. 1972, pp. 1241-1243, New York, U.S.; A. J. R. De Kock et al.: "A New Method for Revealing Striations in High-Resistive Floating-Zone Silicon Crystals".
Rep. Prog. Phys., vol. 45, No. 10, Oct. 1982, pp. 1183-1186, Berlin, DE, R. C. Newman: "Defects in Silicon".

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