Method for etching silicon compound film and process for forming

Details Method for etching silicon compound film and process for forming Method for etching silicon compound film and process for forming

1992-02-19

1994-12-20

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156630, 156653, H01L 21306

Patent

active

053743326

ABSTRACT:
A method for etching a silicon compound film comprises etching the silicon compound film in a gas flow rate ratio of CHF.sub.3 to C.sub.2 F.sub.6 of 1 to 6 under etching pressure of 40 to 120 Pa.

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