Single-crystal semiconductor pulling apparatus

Details Single-crystal semiconductor pulling apparatus Single-crystal semiconductor pulling apparatus

1997-02-06

1998-09-01

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

117202, C30B 3500

Patent

active

058006125

ABSTRACT:
A single-crystal semiconductor pulling apparatus improves the crystallization rate by reinforcing the physical strength of the Dash's neck portion, and eliminate the process time difference depending on the experiences of operators. The single-crystal semiconductor pulling apparatus, which is according to the Czochralski method, includes controller for automatically controlling the pulling rate of a seed crystal and a melt temperature. The controller modifies a target value of a diameter of a crystal grown from the seed which is immersed from a first value to a second value. The first value is for ensuring dislocation-free state, while the second value is for retaining physical strength of the crystal. Furthermore, the controller is provided with the function of judging the crystal to be in dislocation-free state. That is, the controller measures a length of each portion of the crystal whose diameter is smaller than the first value, and accumulates the length, and judges the crystal to be in dislocation-free state when the accumulate value is a value determined according to a reference length.

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patent: 5578284 (1996-11-01), Chandrasekhar et al.

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