Single crystal pulling method

Details Single crystal pulling method Single crystal pulling method

1998-07-24

2000-03-28

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117217, 117218, 117911, C30B 1532

Patent

active

060426446

ABSTRACT:
A single crystal pulling method includes the steps of: immersing seed crystal in a melt; growing single crystal around the seed crystal and reducing its diameter to remove dislocation in the single crystal; prior to forming a straight waist product portion of single crystal having a prescribed diameter, forming a straight waist holding portion having a diameter smaller than the prescribed diameter; holding the straight waist holding portion by using a single crystal holding device; and pulling the straight waist product portion while the straight waist holding portion is held. Preferably the step of forming the straight waist holding portion includes a step of varying a pulling speed to make unevenness in the surface thereof.

REFERENCES:
patent: 5196086 (1993-03-01), Kida et al.
patent: 5487355 (1996-01-01), Chiou et al.
patent: 5910216 (1999-06-01), Nakamura et al.
patent: 5911821 (1999-06-01), Iino et al.

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