Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1991-10-08
1994-05-31
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
417932, C30B 1514
Patent
active
053167422
ABSTRACT:
A single crystal pulling apparatus using Czochralski method includes a first screen in the shape of a hollow round cylinder. One side of the first screen facing a quartz crucible is made of a heat absorbent material and another side of the first screen is made of a heat insulator material. The upper and lower ends of the first screen have an outwardly extending flange and an inwardly extending flange, respectively. The first screen surrounds a single crystal pulling zone such that its lower flange is positioned near a melt charged zone in the crucible. The apparatus also includes a second screen positioned inside the first screen. The vertical section of the second screen has the shape of a substantially parabola and the center of the bottom of the second screen is open and surrounds the single crystal pulling zone. The upper end of the second screen has an outwardly extending flange. The apparatus increases the pulling speed of a grown single crystal and improves preventing degree of dislocation in the grown single crystal due to contamination of the grown single crystal with impurities.
REFERENCES:
patent: 3857679 (1974-12-01), Allred
patent: 4686091 (1987-08-01), Washizuka et al.
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4957713 (1990-09-01), Kravetsky et al.
patent: 4981549 (1991-01-01), Yamashita et al.
Matsuzaki Akihiro
Nagai Kazunori
Tomioka Junsuke
Garrett Felisa
Komatsu Electronic Metals Co. Ltd.
Kunemund Robert
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