Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-05-31
2005-05-31
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S028000, C117S217000, C117S218000
Reexamination Certificate
active
06899759
ABSTRACT:
A single crystal production method based on the Czochralski method comprises controlling a number of crucible rotations and crystal rotations so that a number of vibrations for driving a melt, determined on the basis of the number of crucible and crystal rotations during a single crystal growing procedure, is outside a range from 95% to 105% of a number of sloshing resonance vibrations of the melt. In another embodiment, the method comprises controlling a number of rotations of a crystal and crucible, so that when a number of vibrations for driving a melt, determined by the number of crucible and crystal rotations during a single crystal growing procedure, is within a range from 95% to 105% of a number of sloshing resonance vibrations of the melt, the number of vibrations of the melt due to sloshing does not exceed 2000 times during a period when the number of vibrations is within that range.
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Kishida Yutaka
O-hashi Wataru
Takebayashi Seiki
Tamaki Teruyuki
Collard & Roe P.C.
Hiteshew Felisa
Siltronic AG
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