Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-05-18
1989-05-16
Doll, John
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156601, 1566191, 156DIG80, 422249, C30B 1522
Patent
active
048307033
ABSTRACT:
A pair of coils are arranged to surround a crucible for storing a melt. The axes of the coils are vertical and the melt is heated by a heater. When the coils are energized such that the magnetic fluxes thereof oppose each other along the axial direction, a magnetic field having an isomagnetic field distribution of an elliptical shape is formed. When the energization current is properly selected, a magnetic field for restricting thermal convection of the upper melt portion is formed, while, conversely, thermal convection of the lower melt portion occurs. When the melt surface level is lowered upon pulling of the single crystal, a magnetic field is controlled such that the boundary between the thermal convection restriction region and the thermal convection region is, similarly, lowered. Since thermal convection is restricted near the solid-liquid interface layer, the single crystal can be stably grown. In the lower melt portion, thermal convection is present such that the lower melt is stirred. The temperature of the melt is uniform, thereby manufacturing a uniform single crystal ingot of high quality.
REFERENCES:
patent: 3074785 (1963-01-01), Gremmelmaier
patent: 3607139 (1971-09-01), Hanks
patent: 3798007 (1974-03-01), Bochman et al.
patent: 4565671 (1986-01-01), Matsutani et al.
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 4659423 (1987-04-01), Kim et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 2, (Jul. 1983), pp. 601 to 603.
Japanese Patent Disclosure (Kokai) No. 58-217493; disclosed 12/17/83; request for examination; not yet made; Applicants: Nippon Telegraph and Telephone Public Corporation et al; "Lift-up Method for a Single Crystal".
Japanese Patent Disclosure (Kokai) No. 57-149894; disclosed: 9/16/82; request for examination: not yet made; Applicant: Nippon Telegraph and Telephone Public Corporation; "Crystal Growth Method and Apparatus".
Japanese Patent Disclosure (Kokai) No. 56-104791; disclosed 8/20/81; request for examination: made; Applicant: Sony Corporation; "Crystal Growth Method".
Doll John
Kabushiki Kaisha Toshiba
Kunemund Robert M.
LandOfFree
Single crystal growth apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single crystal growth apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single crystal growth apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2320124