Single crystal growing of rare earth-gallium garnet

Details Single crystal growing of rare earth-gallium garnet Single crystal growing of rare earth-gallium garnet

1983-06-13

1985-08-13

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG63, 156DIG89, C30B 1514

Patent

active

045348219

ABSTRACT:
An improvement in the Czochralski single crystal growing of a rare earth-gallium garnet such as gadolinium gallium garnet according to which the single crystal boules of a relatively large diameter and outstandingly free from any crystal defects and inclusions are readily obtained. The improved method comprises keeping the melt of the oxide mixture formed in an iridium crucible for at least 15 hours in the molten state before crystal growing is started. It was also shown that addition of certain additive gases, e.g. water vapor, carbon dioxide and oxygen, to the gaseous atmosphere mainly composed of, for example, nitrogen, in which crystal growing was performed, in a limited proportion was effective to further improve the crystal quality and to decrease the particulate inclusions in the single crystal boules.

REFERENCES:
patent: 3723599 (1973-03-01), Brandle et al.
patent: 4233270 (1980-11-01), Schmidt
patent: 4400232 (1983-08-01), Ownby et al.

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