Single crystal growing method having improved melt control

Details Single crystal growing method having improved melt control Single crystal growing method having improved melt control

1984-11-27

1989-10-17

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566181, 156DIG98, 156601, C30B 1524

Patent

active

048744581

ABSTRACT:
In a single crystal growing technique (crystal pulling) a method for minimizing impurity contamination and preventing heat convection currents from affecting the solid-melt crystal growing interface which uses a floating baffle plate in the interior of the feed melt containing crucible in order to obtain a single crystal of a compound semiconductor having a high melting point and exhibiting a high dissociation pressure at said melting point such as a compound semiconductor of Groups III-V, especially GaAs or Gap, the crystal having a small dislocation density. Improvement is made on the shape of the baffle plate and on baffle plate control mechanisms, and this baffle plate is combined with selected intra-furnace pressure or heating mechanisms or temperature measuring mechanisms.

REFERENCES:
patent: 3621213 (1971-11-01), Jen et al.
patent: 4096024 (1978-06-01), Dusserre et al.
patent: 4196171 (1980-04-01), Watanabe et al.
patent: 4267154 (1981-05-01), Mueller et al.
patent: 4314128 (1982-02-01), Chitre
patent: 4497777 (1985-02-01), Kojima
patent: 4556784 (1985-12-01), Nakai

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