Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1989-03-09
1989-11-07
Saba, William G.
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
148 334, 148DIG53, 148DIG81, 148DIG169, 357 4, 357 2315, 357 237, 437 84, 437105, 437243, 437962, H01L 29201, H01L 2978
Patent
active
048789569
ABSTRACT:
Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a moleuclar beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.
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patent: 3385731 (1968-05-01), Weimer
patent: 3405331 (1968-10-01), Skalski et al.
patent: 3692572 (1972-09-01), Strehlow
patent: 4453172 (1984-06-01), Farrow
"Insulating Epitaxial Films of BaF.sub.2, CaF.sub.2 and Ba.sub.x Ca.sub.1-x F.sub.2 Grown by MBE on InP Substrates", Journal of Crystal Growth, 60, P. W. Sullivan et al, 1982, pp. 403-413.
"MBE-Grown Fluoride Films: A New Class of Epitaxial Dielectrics" Journal of Vacuum Science and Technology, 19(3), Farrow et al, 1981, pp. 415-420.
"Epitaxial Growth of Lattice Matched Group II Fluorides on GaAs Substrates" Second European Workshop on Molecular Beam Epitaxy, C. Fontaine et al, 1983, Abstract.
Heterostructure Lasers: Part B-Materials and Operating Characteristics, H. C. Casey, Jr. et al, 1978, Academic Press, New York, Chapter 5.
"Growth of Single-Crystalline epitaxial Group II Fluoride Films on InP(001) by Molecular-Beam Epitaxy", Journal of the Electrochemical Society 130(10), C. W. Tu et al, 1983, pp. 2081-2087.
Johnston, Jr. Wilbur D.
Tu Charles W.
American Telephone & Telegraph Company AT&T Bell Laboratories
Nilsen Walter G.
Saba William G.
Schneider Bruce S.
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