Single crystal, dual wafer, tunneling sensor or switch with...

Details Single crystal, dual wafer, tunneling sensor or switch with... Single crystal, dual wafer, tunneling sensor or switch with...

2006-01-03

2006-01-03

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S050000, C438S455000, C438S459000

Reexamination Certificate

active

06982185

ABSTRACT:
A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on an etch stop layer on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

REFERENCES:
patent: 5015850 (1991-05-01), Zdeblick et al.
patent: 5210714 (1993-05-01), Pohl et al.
patent: 5226321 (1993-07-01), Varnham et al.
patent: 5265470 (1993-11-01), Kaiser et al.
patent: 5313835 (1994-05-01), Dunn
patent: 5354985 (1994-10-01), Quate
patent: 5475318 (1995-12-01), Marcus et al.
patent: 5659195 (1997-08-01), Kaiser et al.
patent: 5665253 (1997-09-01), Kubena et al.
patent: 5666190 (1997-09-01), Quate et al.
patent: 5747804 (1998-05-01), Williams et al.
patent: 5883387 (1999-03-01), Matsuyama et al.
patent: 5894090 (1999-04-01), Tang et al.
patent: 5929497 (1999-07-01), Chavan et al.
patent: 5994750 (1999-11-01), Yagi
patent: 6075585 (2000-06-01), Minne et al.
patent: 6091125 (2000-07-01), Zavracky
patent: 6092423 (2000-07-01), Beardmore
patent: 6174820 (2001-01-01), Habermehl et al.
patent: 6211532 (2001-04-01), Yagi
patent: 6229190 (2001-05-01), Bryzek et al.
patent: 6296779 (2001-10-01), Clark et al.
patent: 6337027 (2002-01-01), Humphrey
patent: 6555404 (2003-04-01), Kubena et al.
patent: 6563184 (2003-05-01), Kubena et al.
patent: 6630367 (2003-10-01), Kubena et al.
patent: 43 05 033 (1993-10-01), None
patent: 0 619 495 (1994-10-01), None
patent: 04-369418 (1992-12-01), None
patent: 08-203417 (1996-08-01), None
patent: 97-10698 (1997-03-01), None
U.S. Appl. No. 10,223,874, filed Aug. 19, 2002, Kubena et al.
U.S. Appl. No. 10/370,124, filed Feb. 18, 2003, Kubena et al.
U.S. Appl. No. 10/429,988, filed May 6, 2003, Kubena et al.
U.S. Appl. No. 10/639,289, filed Aug. 11, 2003, Kubena et al.
Zavracky, P.M., et al., “Design and Process Considerations For A Tunneling Tip Accelerometer,”J. Micromech. Microeng., vol. 6, No. 3, pp. 192-199 (Sep. 1996).
Abstract of JP 04-369418,Patent Abstracts of Japan,vol. 017, No. 250, May 18, 1993.
Abstract of JP 08-230417,Patent Abstracts of Japan,vol. 1996, No. 12 Dec. 26, 1996.
Cheng, Y.T. and Khali Nayafi, “Localized Silicon Fusion and Eutectic Bonding for MEMS Fabrication and Packaging,”Journal of Microelectromechanical Systems,vol. 9, No. 1, pp. 3-8 (Mar. 2000).
Grade, J., et al., “Wafer-Scale Processing, Assembly, and Testing of Tunneling Infrared Detectors,”International Conference on Solid-State Sensors and Actuators,Chicago, Illinois, pp. 1241-1244 (Jun. 16-19, 1997).
Grétillat, F., et al., “Improved Design of a Silicon Micromachined Gyroscope with Piezoresistive Detection and Electromagnetic Excitation, ”IEEE Journal of Microelectromechanical Systems,vol. 8, No. 3, pp. 243-250 (Sep. 1999).
Kenny, T.W., et al., “Micromachined Silicon Tunnel Sensor for Motion Detection,”Appl. Phys. Lett.,vol. 58, No. 1, pp. 100-102 (Jan. 1991).
Kubena, R.L., et al., “A New Miniaturized Surface Micromachined Tunneling Accelerometer,”IEEE Electron Device Letters,vol. 17, No. 6, pp. 306-308 (Jun. 1996).
Kubena, R.L., et al., “New miniaturized tunneling-based gyro for inertial measurement applications,” 43rdJournal of Vacuum Science & Technology B(Microelectronics and Nanometer Structures, vol. 17, No. 6, pp. 2948-2952 (Nov./Dec. 1999).
Liu, C-H, et al., “Characterization of a High-Sensitivity Micromachined Tunneling Accelerometer with Micro-g Resolution,”Journal of Microelectromechanical Systems,vol. 7, No. 2, pp. 235-243 (Jun. 1998).
Motamedi, M.E., et al., “Tunneling Tip Engine for Microsensors Applications,”Materials and Device Characterization in Micromachining II-Proceedings of the SPIE,Santa Clara, California, vol. 3875, pp. 192-199 (Sep. 1999).
Yeh, C., et al., “A Low-Voltage Bulk-Silicon Tunneling-Based Microaccelerometer,”IEEE,pp. 23.1.1-23.1.4 (1995).

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