Single crystal diamond wafer fabrication

Details Single crystal diamond wafer fabrication Single crystal diamond wafer fabrication

1992-06-05

1994-03-01

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG68, 423446, 437 84, C30B 2904

Patent

active

052903923

ABSTRACT:
This invention discloses a method of fabricating a plurality of diamond semiconductor wafers from a single crystal diamond semiconductor boule, where the diamond boule is grown by a chemical vapor deposition (CVD) process. Initially, a single crystal diamond seed is polished and an impurity layer is deposited on the polished seed crystal. The CVD growth process is then initiated to deposit a layer of single crystal diamond over the impurity layer to form the diamond boule. At desirable intervals, the CVD growth process is stopped and a surface of the diamond boule is polished in order to accept another impurity layer. Each impurity layer is photolithographically patterned in order to generate an alternating configuration of impurity regions and hole regions. The impurity regions and the hole regions enable the bond between the diamond layers to be weakened without causing the crystalline orientation to deviate. Once the diamond semiconductor boule is developed by this process, it can be easily sliced by a laser slicing process into a plurality of diamond semiconductor wafers along the impurity layers.

REFERENCES:
patent: 4547257 (1985-10-01), Iizuka et al.
patent: 5006203 (1991-04-01), Purdes

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