Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1993-12-06
1995-05-30
Kunemund, Robert M.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
423446, 117929, C30B 2904
Patent
active
054192765
ABSTRACT:
Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising comminution of diamond of high isotopic purity, such as that obtained by low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by conversion of the comminuted diamond to single-crystal diamond under high pressure conditions.
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Anthony Thomas R.
Banholzer William F.
Bigio Laurence
Bray James W.
Fleischer James F.
General Electric Company
Kunemund Robert M.
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