Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1997-04-23
1998-06-16
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Differential sensing
3652385, 365207, G11C 700
Patent
active
057682038
ABSTRACT:
To avoid large consumption of current, a memory system includes a first memory cell array and a second memory cell array, each including a plurality of word lines connected to a plurality of memory cells of the first and second memory cell arrays, respectively, a first activator for activating a first word line of the word lines of the first memory cell array, and for making the first memory cell array output data from the memory cells connected to the first word line, a second activator for activating a second word line of the word lines of the second memory cell array, and for making the second memory cell array output data from the memory cells connected to the second word line, a first sense circuit for receiving the data from the first memory cell array, and for amplifying the data from the first memory cell array, a second sense cirsuit for receiving the data from the second memory cell array, and for amplifying the data from the second memory cell array at a rate faster than the first sense ciruit, and an output control circuit for outputting the data of the second sense circuit, and for outputting subsequently the data of the first sense circuit.
REFERENCES:
patent: 5289419 (1994-02-01), Hashizumi
patent: 5508643 (1996-04-01), Khieu
patent: 5559455 (1996-09-01), McPartland
Mai Son
NEC Corporation
Nelms David C.
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