Single-chip memory system and method for operating the same

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365190, G11C 700

Patent

active

059301902

ABSTRACT:
To fabricate a smaller memory system, a memory system includes a memory cell array having a first memory cell and a second memory cell, a first switching circuit connected to the first memory cell, a second switching circuit connected to the second memory cell, and a sense amplifier connected to the first and second switching circuits. The sense amplifier includes an N-type flip-flop circuit for selectively amplifying data from the first memory cell or the second memory cell, a P-type flip-flop circuit for selectively amplifying the data from the first memory cell or the second memory cell, and a first circuit formed between the N-type flip-flop circuit and the P-type flip-flop circuit. When data in the first memory cell is to be transferred, the first switching circuit is activated and the data from the first memory cell is transferred to the sense amplifier, and then the data is amplified by the sense amplifier. When data in the second memory cell is to be transferred, the second switching circuit is activated and the data from the second memory cell is transferred to the sense amplifier, and then the data is amplified by the sense amplifier.

REFERENCES:
patent: 5274585 (1993-12-01), Suyama
patent: 5313426 (1994-05-01), Sakuma
patent: 5566116 (1996-10-01), Kang
patent: 5701268 (1997-12-01), Lee

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