Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257S319000, C257S320000, C257S321000
Reexamination Certificate
active
10870166
ABSTRACT:
A device is described comprising a substrate of a first conductivity type having a first dopant concentration, a first well formed in the substrate, a second well of the first conductivity type formed in the substrate and being deeper than the first well, the second well having a higher dopant concentration than the first dopant concentration, and a nonvolatile memory cell formed on the second well. A device is described comprising four wells of various conductivity types with a nonvolatile memory cell formed on the second well. A device is described comprising a plurality of wells for isolating transistors of a plurality of voltage ranges, wherein each one of the plurality of wells contains at least one transistor of a particular voltage range, and wherein transistors of only one of the plurality of voltage ranges are within each of the plurality of wells. A method is described of isolating transistors of a first voltage range from transistors of another voltage range, comprising forming a first well to hold transistors only of a first particular voltage range, and forming a second well to hold transistors only of a second particular voltage range.
REFERENCES:
patent: 5239197 (1993-08-01), Yamamoto
patent: 5276646 (1994-01-01), Kim et al.
patent: 5541125 (1996-07-01), Williams et al.
patent: 5907171 (1999-05-01), Santin et al.
patent: 6055655 (2000-04-01), Momohara
patent: 6165847 (2000-12-01), Kanamori
patent: 6174759 (2001-01-01), Verhaar et al.
patent: 6297094 (2001-10-01), Matsubara et al.
patent: 6420769 (2002-07-01), Patelmo et al.
patent: 6717204 (2004-04-01), Furuhata et al.
patent: 2001/0004120 (2001-06-01), Colclaser et al.
patent: 2001/0024861 (2001-09-01), Patelmo et al.
patent: 2003/0103382 (2003-06-01), Kobayashi
patent: 2003037250 (2003-02-01), None
German Office Action dated Mar. 21, 2006.
French Preliminary Search Report dated Feb. 26, 2007.
Han Jeong-Uk
Kim Byoung-Ho
Kim Ju-Ri
Kim Sang-Soo
Park Sung-Chul
Harness Dickey & Pierce PLC
Samsung Electronics Co,. Ltd
Tran Thien F
LandOfFree
Single chip data processing device with embedded nonvolatile... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single chip data processing device with embedded nonvolatile..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single chip data processing device with embedded nonvolatile... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3938221