Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-09-13
2005-09-13
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185120
Reexamination Certificate
active
06944061
ABSTRACT:
The present invention relates to a particular single cell erasing method for recovering memory cells under reading or programming disturbs in non volatile semiconductor memory electronic devices comprising cell matrix split in sectors and organized in rows, or word lines, and columns, or bit lines.This kind of memory devices generally provides the application of a sector erasing algorithm with subsequent testing phase (erase-verify); but the method according to the present invention provides a bit by bit erasing by applying to each single word line a negative voltage used during the erasing of a whole sector and on the drain terminal of each single cell a programming voltage.With this kind of selective bias it is possible to perform a single cell, or bit by bit, erasing, allowing all the cells in case under a reading or programming disturb increasing the original threshold value thereof to be recovered.
REFERENCES:
patent: 5753953 (1998-05-01), Fukumoto
patent: 5969993 (1999-10-01), Takeshima
patent: 6118705 (2000-09-01), Gupta et al.
patent: 6178117 (2001-01-01), Cleveland
patent: 6570790 (2003-05-01), Harari
patent: 2002/0071309 (2002-06-01), Miwa et al.
patent: 2004/0029335 (2004-02-01), Lee et al.
patent: 0932161 (1999-07-01), None
patent: WO 01/15172 (2001-03-01), None
European Search Report, EP02425727, Nov. 21, 2003.
Camerlenghi Emilio
Campardo Giovanni
Ghilardi Tecla
Graybeal Jackson Haley LLP
Hoang Huan
Jorgenson Lisa K.
Rusyn Paul F.
STMicroelectronics S.r.l.
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