Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-06-07
2011-06-07
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000
Reexamination Certificate
active
07957183
ABSTRACT:
An SMT MRAM device includes a plurality of SMT MRAM cells arranged in an array of rows and columns. Single bit lines connect the columns of the SMT MRAM cells for receiving an in-phase data signal. Source lines connect pairs of rows of the SMT MRAM cells for receiving an out-of-phase data signal. Out-of-phase switching devices are connected to the source lines for selectively transferring the out-of-phase signal to the at least one source lines. Column select transistors are connected to the single bit lines for transferring an in-phase data signal to a selected column of the SMT MRAM cells. A precharge circuit selectively charges or discharges the single bit lines. Ground switching devices selectively connect to the source lines to a ground reference voltage source. A method for programming a selected SMT MRAM cell within a provided SMT MRAM device is described.
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Ackerman Stephen B.
Knowles Billy
MagIC Technologies, Inc.
Saile Ackerman LLC
Tran Michael T
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