Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-27
1997-08-12
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257319, 257321, H01L 29788, H01L 2976
Patent
active
056568401
ABSTRACT:
A semiconductor transistor device on a semiconductor substrate comprises source/drain regions in the substrate. A tunnelling oxide layer combined with a gate oxide layer covers the substrate including the heavily doped regions. A pair of floating gates above the tunnelling oxide layer form source/drain relationships with three centrally located ones of the heavily doped regions. A first dielectric layer covers the floating gates. A set of control gates cover the first dielectric layer. A second dielectric layer covers the control gates. The floating gate structure, the first dielectric layer, the control gate layer and the second dielectric layer all forming with the three centrally located heavily doped regions an adjacent pair of stacked EEPROM transistor structures, with two additional, adjacent, outboard heavily doped regions. Spacers cover the tunneling oxide regions covering the second dielectric layer and the sides of the stacked structure, and a select gate line extends over the top of the spacer layer structure and in source/drain relationship with the two additional outboard heavily doped regions and the outer ones of the three centrally located heavily doped regions.
REFERENCES:
patent: 4996571 (1991-02-01), Kume et al.
patent: 5416349 (1995-05-01), Bergemont
patent: 5471422 (1995-11-01), Chang et al.
Fahmy Wael
United Microelectronics Corporation
Wright William H.
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