Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1989-11-20
1993-02-02
Bell, Janyce
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
4271261, 4271262, 427226, 427240, 427255, 4272552, 427343, 427344, 427380, 4274197, 427420, 427421, 4274301, 427578, 437231, 437235, 437241, B05D 306, B05D 302, C23C 1600
Patent
active
051836840
ABSTRACT:
Ceramic or ceramic-like single, two, or multilayer coatings having aluminum nitride as one of the layers are provided, including methods for the preparation of such coatings which produce planarizing, passivating and hermetic barrier coatings on temperature sensitive substrates such as semiconductors and electronic devices. The aluminum nitride ceramic or ceramic-like coating is provided by applying a liquid alkylaluminum amide having the formula (R.sub.2 AlNH.sub.2).sub.3, where R is an alkyl group containing from 1 to 4 carbon atoms, neat or diluted in an organic solvent. The liquid coating is then dried, followed by heating the coating to a temperature of between about 400.degree. to about 100.degree. C. in the presence of ammonia to produce an aluminum nitride-containing ceramic coating.
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"A Thermoplastic Organoaluminum Precursor of Aluminum Nitride," Am. Ceram. Soc., Electronics Div., Denver (1987).
Interrant et al, "Studies of Organometallic Precursors to Aluminum Nitride," Mat. Res. Soc. Symp. Proc., 73 Better Ceram. Through Chem. 2, pp. 359-366 (1986).
Bell Janyce
Dow Corning Corporation
Hagan Timothy W.
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