Simultaneously measuring thickness and composition of a film

Details Simultaneously measuring thickness and composition of a film Simultaneously measuring thickness and composition of a film

1992-07-01

1993-08-03

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 8, 356357, 356359, 356360, G01B 1100, G01N 1102

Patent

active

052325474

ABSTRACT:
A semiconductor wafer (11) with a lattice mismatched film (12) on its upper surface is placed on a flat support surface (15). A laser beam (13, 23, 24, 26, 27) is directed onto the film (12). Curvature of the semiconductor wafer caused by the film (12) is measured simultaneously with film thickness based on characteristics of the reflected laser beam (23, 24, 26, 27). Strain within the film (12) is calculated from the curvature of the semiconductor wafer, film composition is calculated from the stress and thickness based on known properties of the film (12).

REFERENCES:
patent: 4872758 (1989-10-01), Miyazaki et al.
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5096533 (1992-03-01), Igarashi
patent: 5129724 (1992-07-01), Brophy et al.

Affiliated with

Also associated with

Rating

Simultaneously measuring thickness and composition of a film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Simultaneously measuring thickness and composition of a film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Simultaneously measuring thickness and composition of a film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2267579