Simultaneous read-write memory cell at the bit level for a...

Details Simultaneous read-write memory cell at the bit level for a... Simultaneous read-write memory cell at the bit level for a...

2005-08-16

2005-08-16

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Simultaneous operations

C365S220000, C365S219000, C365S189020, C365S230030, C345S547000, C345S560000

Reexamination Certificate

active

06930929

ABSTRACT:
An improved memory for graphics displays includes an improved memory cell. Data may be written and read from the single bit cell simultaneously, eliminating the need for additional memory circuits to service an N column driver for a display. Additionally, the architecture of the memory allows for a signal input port for writing the data to the cell while allowing for multiple parallel output ports for reading the data. The unique architecture eliminates the need for addressing logic and refresh circuitry for display applications.

REFERENCES:
patent: 6657881 (2003-12-01), Rickes et al.
patent: 6775191 (2004-08-01), Pancholy et al.
patent: 2002/0018371 (2002-02-01), Nasu

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