Simultaneous plasma sculpturing and dual tapered aperture etch

Details Simultaneous plasma sculpturing and dual tapered aperture etch Simultaneous plasma sculpturing and dual tapered aperture etch

1985-04-15

1987-11-10

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156657, 1566591, 430313, 430317, 148DIG161, H01L 21308, H01L 2132, B44L 122

Patent

active

047055960

ABSTRACT:
A method of planarizing a semiconductor layer by use of a plasma etch step which also etches vias having a tapered profile is made possible by selecting a conformal layer preferably of a different material than the material through which the via is to be provided such that a plasma etch will establish differing etch rates in the conformal and underlying layers.

REFERENCES:
patent: 4484979 (1984-11-01), Stocker
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4554048 (1985-11-01), Manocha
patent: 4560436 (1985-12-01), Bukhman
Briska, et al., "Shortened Method for Opening Via Holes", IBM Tech. Disclosure Bull., vol. 21, No. 8, Jan. 1979, p. 3229.

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