Simultaneous front side ash and backside clean

Details Simultaneous front side ash and backside clean Simultaneous front side ash and backside clean

2006-10-12

2010-06-22

Alanko, Anita K (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C134S001200, C134S902000, C156S345510, C156S345540, C118S719000, C118S728000, C438S710000, C438S716000, C438S734000, C438S906000, C427S096900, C427S569000

Reexamination Certificate

active

07740768

ABSTRACT:
A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.

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