Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2008-01-14
2009-12-22
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C324S071500, C324S500000, C324S719000
Reexamination Certificate
active
07635602
ABSTRACT:
There is provided a method for simulating ion implantation which includes the steps of calculating an integral value Φa/cby integrating concentration distribution of Ge in a test silicon substrate from the thickness of an amorphous layer to infinite, acquiring a form parameter of the Ge concentration distribution in a product silicon substrate by referring to a database, creating a distribution function which approximates the Ge concentration distribution by using the form parameter, and obtaining such a depth that an integral value obtained by integrating the distribution function from the depth to infinite can be equal to the integral value Φa/c, and then specifying that the depth is the thickness of an amorphous layer.
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International Search Report of PCT/JP2005/012922, date of mailing Oct. 25, 2005.
Fujitsu Limited
Fujitsu Patent Center
Nguyen Ha Tran T
Pathak Shantanu C
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