Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2008-03-11
2008-03-11
Whitmore, Stacy A (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000, C716S030000, C703S013000, C703S014000, C324S765010
Reexamination Certificate
active
07343571
ABSTRACT:
There is disclosed a simulation model for designing a semiconductor device, comprising adding at least a part of a difference between a density of a carrier described in a quasi-static manner with respect to a voltage applied between electrodes at a first time and a density of the carrier described in a transient state at a second time before the first time to the carrier density at the second time in accordance with a running delay of the carrier between both the times to thereby describe the carrier density at the first time in the transient state with respect to a semiconductor element having the first and second electrodes. A current flowing between the electrodes is described as a sum of a current flowing between the electrodes in the quasi-static manner, and a displacement current between the electrodes.
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Miura Mitiko
Nakayama Noriaki
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Rossoshek Helen
Semiconductor Technology Academic Research Center
Whitmore Stacy A
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