Simulating a dose rate event in a circuit design

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C703S014000

Reexamination Certificate

active

11029308

ABSTRACT:
Behaviors of a transistor during a dose rate event can be modeled using a circuit simulation software package. A subcircuit model replaces a transistor in a circuit design to be simulated. The subcircuit model can be in the form of a schematic-based representation or a netlist. The subcircuit model provides a model of a source junction and a drain junction in the transistor during the dose rate event. The subcircuit model also includes the size of the transistor being replaced and the dose rate of the dose rate event. Once the transistor is replaced with the subcircuit model, a dose rate simulation may be performed to determine the dose rate hardness of the circuit design.

REFERENCES:
patent: 4130892 (1978-12-01), Gunckel et al.
patent: 4225797 (1980-09-01), Fredrickson
patent: 4766482 (1988-08-01), Smeltzer et al.
patent: 4800299 (1989-01-01), Hayward
patent: 4876583 (1989-10-01), Hughes et al.
patent: 5391931 (1995-02-01), Larner
patent: 5396169 (1995-03-01), Buehler et al.
patent: 5841293 (1998-11-01), Leas
patent: 5861634 (1999-01-01), Hsu et al.
patent: 6269277 (2001-07-01), Hershenson et al.
patent: 6275080 (2001-08-01), Phan et al.
patent: 7039566 (2006-05-01), Koike
patent: 7100131 (2006-08-01), Honda
Nitin Mohan, “Radiation Effects on Electronic Devices,” Project Report E & CE 709, http://www.ece.uwaterloo.ca
n2mohan/rad.pdf, printed Sep. 28, 2004.
C. Barnes and L. Selva, “Radiation Effects in MMIC Devices,” http://www.parts.jpl.nasa.gov/mmic/10.pdf, printed Oct. 5, 2004.
Military Handbook, Dose-Rate Hardness Assurance Guidelines, MIL-HDBK-815, Nov. 7, 1994.
International Search Report for PCT/US2005/046508 dated Jul. 6, 2006.
Tor A. Fjeldly et al., “Modeling of High-Dose-Rate Transient Ionizing Radiation Effects in Bipolar Devices,” IEEE Transaction on Nuclear Science, IEEE Service Center, New York, NY, U.S., vol. 48, No. 5, Oct. 2001.
Pouget V., et al., “Spice Modeling of the Transient Response of Irradiated MOSFETs”, Radiation and its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on Sep. 13-17, 1999, Piscataway, NJ, U.S.A., IEEE Sep. 13, 1999, pp. 69-74.
Yanqing Deng et al., “Spice Modeling of Double Diffused Vertical Power MOSFETs Exposed to Gamma Radiation,” Semiconductor Device Research Symposium, 2004 International Dec. 10-12, 2003, Piscataway, NJ, U.S.A. IEEE, Dec. 10, 2003, pp. 138-139.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Simulating a dose rate event in a circuit design does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Simulating a dose rate event in a circuit design, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Simulating a dose rate event in a circuit design will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3933782

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.