Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2008-01-22
2008-01-22
Whitmore, Stacy (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C703S014000
Reexamination Certificate
active
07322015
ABSTRACT:
Behaviors of a transistor during a dose rate event can be modeled using a circuit simulation software package. A subcircuit model replaces a transistor in a circuit design to be simulated. The subcircuit model can be in the form of a schematic-based representation or a netlist. The subcircuit model provides a model of a source junction and a drain junction in the transistor during the dose rate event. The subcircuit model also includes the size of the transistor being replaced and the dose rate of the dose rate event. Once the transistor is replaced with the subcircuit model, a dose rate simulation may be performed to determine the dose rate hardness of the circuit design.
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Golke Keith W.
Liu Harry H. L.
Liu Michael S.
Vogt Eric E.
Honeywell Internatinal Inc.
McDonnell Boehnen & Hulbert & Berghoff LLP
Whitmore Stacy
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