Simplified method of patterning polysilicon gate in a semiconduc

Details Simplified method of patterning polysilicon gate in a semiconduc Simplified method of patterning polysilicon gate in a semiconduc

1999-08-02

2000-08-22

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438222, 438341, 438636, 148 333, H01L 2100

Patent

active

061071676

ABSTRACT:
Polysilicon gates are formed with greater accuracy and consistency by depositing an antireflective layer, e.g., amorphous silicon, on the polysilicon layer before patterning. Embodiments also include depositing the polysilicon layer and the amorphous silicon layer in the same tool.

REFERENCES:
patent: 5626967 (1997-05-01), Pramanick et al.
patent: 5670423 (1997-09-01), Yoo
patent: 5872385 (1999-02-01), Taft et al.
patent: 5883011 (1999-03-01), Lin et al.

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