Simplified double mask patterning system

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S005000, C430S394000

Reexamination Certificate

active

07927782

ABSTRACT:
One embodiment of the present invention relates to a method for which a two mask lithography process can be used to reduce design density. The two mask process uses a first mask to expose a first photoresist layer located above a hard mask layer. The first photoresist is exposed in such a way that the level forms one or more lines, on opposite sides of a cell boundary. The hard mask is then etched. A second photoresist layer is deposited above the hard mask. The second mask is used to expose the second photoresist layer in such a way that a space is formed along the cell boundary equal to the minimum space of the level as required by the design rules. The hard mask is then etched again. The hard mask is subsequently used to pattern the layer below it. Other methods and structures are also disclosed.

REFERENCES:
patent: 6492073 (2002-12-01), Lin et al.
patent: 6969580 (2005-11-01), Minami
patent: 7208423 (2007-04-01), Hashimoto et al.
patent: 7662718 (2010-02-01), Abatchev et al.
patent: 7759253 (2010-07-01), Chang
patent: 7829246 (2010-11-01), Kawakami
patent: 7862988 (2011-01-01), Koh et al.
patent: 7867693 (2011-01-01), Mieher
patent: 2002/0160590 (2002-10-01), Hashimoto et al.

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