Simple process for fabricating semiconductor devices

Details Simple process for fabricating semiconductor devices Simple process for fabricating semiconductor devices

2005-05-17

2005-05-17

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Masking

C438S401000, C438S462000, C438S552000, C438S942000

Reexamination Certificate

active

06893987

ABSTRACT:
An alignment pattern is required for photo masks to be exactly aligned with one another; an amorphous silicon is deposited over the entire surface of an insulating layer except for an area where the alignment pattern is to be formed, and a pattern for an ion-implantation and the alignment pattern are concurrently transferred to a photo resist layer; dopant impurity is ion implanted into the amorphous silicon layer by using the photo resist mask, and the insulating layer is selectively etched also by using the photo resist mask; this results in simplification of the process sequence.

REFERENCES:
patent: 4504148 (1985-03-01), Kuroki et al.
patent: 4900396 (1990-02-01), Hayashi et al.
patent: 4958160 (1990-09-01), Ito et al.
patent: 5369050 (1994-11-01), Kawai
patent: 5534969 (1996-07-01), Miyake
patent: 5682228 (1997-10-01), Miyake
patent: 5741732 (1998-04-01), Tikhonov
patent: 5969428 (1999-10-01), Nomura et al.
patent: 5978094 (1999-11-01), Narabe et al.
patent: 5981116 (1999-11-01), Ota
patent: 5986765 (1999-11-01), Nakasuji
patent: 6071656 (2000-06-01), Lin
patent: 6124922 (2000-09-01), Sentoku
patent: 6466301 (2002-10-01), Yui et al.
patent: 6628391 (2003-09-01), Hoover et al.
patent: 6677107 (2004-01-01), Hasegawa et al.
patent: 6686107 (2004-02-01), Matsumoto et al.
patent: 20020119609 (2002-08-01), Hatano et al.
patent: 20020130425 (2002-09-01), Koike et al.
patent: 20030202181 (2003-10-01), Maltabes et al.

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