Simple BICMOS process for creation of low trigger voltage SCR an

Details Simple BICMOS process for creation of low trigger voltage SCR an Simple BICMOS process for creation of low trigger voltage SCR an

1996-12-17

1998-10-13

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

297108, 297109, H01L 2974, H01L 31111

Patent

active

058215727

ABSTRACT:
The present invention provides a semiconductor protection device in a substrate having a first type of conductivity. The semiconductor protection device includes two vertical bipolar transistors. A well region is located within the substrate having a second type of conductivity with a base region within the well region having a first type of conductivity. A first doped region having the second type of conductivity and a second doped region having a first type of conductivity are located within the well region. A third doped region having the second type of conductivity and a fourth doped region having the first type of conductivity are located within the base region. A doped region having a first type of conductivity is located within the substrate. This doped region is connected to the fourth doped region.

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patent: 5500546 (1996-03-01), Marum et al.
patent: 5506742 (1996-04-01), Marum
Bipolar SCR ESD Protection Circuit for High Speed Submicron Bipolar/BiCMOS Circuits; 1995 IEEE; Julian Chen et al.; pp. 14,1.1-14,1.4.

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