Silylated photo-resist layer and planarizing method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430156, 430160, 524 94, G03F 711, C08L 3312, C08L 3324, C08L 6110

Patent

active

057562563

ABSTRACT:
A planarizing technique comprising: coating a topography overlying a substrate with a planarizing resist layer; softbaking the planarizing resist layer in the presence of a silicon-containing vapor or liquid; coating the planarizing resist layer with an imaging resist layer; softbaking the imaging resist; selectively exposing the imaging resist layer to light; developing the imaging resist layer; and etching the planarizing layer. The planarizing layer may comprise novolacs and other organic polymers used conventionally in lithographic processes. The planarizing layer may further comprise any organic acid moiety that is compatible with the solvent used to dissolve the resin. In particular, the acid moiety is indole-3-carboxylic acid. In another aspect, the invention comprises a silylated planarizing resist. The resist comprises: a solution of a polymer and an acid, the polymer being selected from the group consisting of a novolac, polymethylmethacrylate, polyhydroxystyrene and polydimethylglutarimide and the acid concentration being homogeneous with respect to a horizontal surface of a substrate to which the solution is applied; and a silicon-rich layer, the layer being formed above the solution by the reaction of an organosilane with the acid.

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patent: 4745018 (1988-05-01), Chihara et al.
patent: 4963463 (1990-10-01), Koshiba
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