Silver thiogallate single crystal layers epitaxially grown from

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156DIG101, C30B 1902

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active

045404615

ABSTRACT:
A method of making a thin, high purity single crystal layer of silver thiogallate. According to the preferred embodiment of this method, a seed crystal substrate of silver thiogallate is dipped into a molten solution of silver thiogallate dissolved in potassium chloride. Upon slowly cooling the solution, the thin layer of single crystal silver thiogallate forms on the substrate. Upon removal, very little of the potassium chloride adheres to the surface, and what does adhere to the surface can be easily removed by washing the surface with hot water.

REFERENCES:
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patent: 4077817 (1978-03-01), Bellavance
patent: 4197008 (1980-04-01), Pinnow et al.
patent: 4376659 (1983-03-01), Castro
Kamath et al., Large-Area High-Efficiency (AlGa)As-GaAs Solar Cells.
IEEE Transactions on Electron Devices, vol. ED-24, No. 4, Apr. 1977, pp. 473-475.
Chedzey et al., A Study of the Melt Growth of Single-Crystal Thiogallates, J. Phys. D: Appl. Phys., 1971, vol. 4, pp. 1320-1324.

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