Etching a substrate: processes – Forming or treating material useful in a capacitor
Reexamination Certificate
2008-01-09
2010-06-15
Cleveland, Michael (Department: 1792)
Etching a substrate: processes
Forming or treating material useful in a capacitor
C528S035000, C528S033000, C438S244000, C438S253000, C438S387000, C438S397000, C427S080000
Reexamination Certificate
active
07736527
ABSTRACT:
Siloxane polymer compositions and methods of manufacturing a capacitor are described. In some embodiments, a mold layer pattern is formed on a substrate having a conductive structure, and the mold layer pattern has an opening to expose the conductive structure. A conductive layer is formed on the substrate. A buffer layer pattern is formed on the conductive layer formed in the opening. The buffer layer pattern includes a siloxane polymer represented by the following Chemical Formula 1. The conductive layer is selectively removed to form a lower electrode. The mold layer pattern and the buffer layer pattern are removed. A dielectric layer and an upper electrode are formed on the substrate to form a capacitor. The methods may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
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Kim Kyoung-Mi
Kim Myung-Sun
Kim Young-Ho
Cleveland Michael
Jiang Lisha
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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