Siloxane epoxy polymers as metal diffusion barriers to...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S632000, C257S741000, C257S744000, C257SE23001, C257SE23019

Reexamination Certificate

active

10832844

ABSTRACT:
Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.

REFERENCES:
patent: 6096648 (2000-08-01), Lopatin et al.
patent: 6387824 (2002-05-01), Aoi
patent: 6528412 (2003-03-01), Wang et al.
patent: 2003/0042613 (2003-03-01), Shioya et al.
patent: 2004/0126482 (2004-07-01), Wu et al.
patent: 2005/0239295 (2005-10-01), Wang et al.
Wang, et al., “Novel Epoxy Siloxane Polymer as Low-K Dielectric”,Mat. Res. Soc. Symp. Proc.,812, F4.4.1-F4.4.6 (2004).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Siloxane epoxy polymers as metal diffusion barriers to... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Siloxane epoxy polymers as metal diffusion barriers to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Siloxane epoxy polymers as metal diffusion barriers to... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3901954

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.