Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-10-23
2007-10-23
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S632000, C257S741000, C257S744000, C257SE23001, C257SE23019
Reexamination Certificate
active
10832844
ABSTRACT:
Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.
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Ghoshal Ramkrishna
Lu Toh-Ming
Murarka Shyam P.
Wang Pei-I
Heslin Rothenberg Farley & & Mesiti P.C.
Polyset Company, Inc.
Purvis Sue A.
Rensselaer Polytechnic Institute
Soderholm Krista Z.
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