Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-07-04
2006-07-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C438S623000
Reexamination Certificate
active
07071540
ABSTRACT:
A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.
REFERENCES:
patent: 3615272 (1971-10-01), Warde et al.
patent: 4399266 (1983-08-01), Matsumura et al.
patent: 4756977 (1988-07-01), Haluska et al.
patent: 4999397 (1991-03-01), Weiss et al.
patent: 5010159 (1991-04-01), Bank et al.
patent: 5853808 (1998-12-01), Arkles et al.
patent: 6000339 (1999-12-01), Matsuzawa
patent: 6232424 (2001-05-01), Zhong et al.
patent: 6660822 (2003-12-01), Lyu et al.
patent: 0 997 497 (2000-05-01), None
Lyu Yi Yeol
Ryu Joon Sung
Seon Jong Baek
Song Ki Yong
Harness & Dickey & Pierce P.L.C.
Hoang Quoc
Nelms David
Samsung Electronics Co,. Ltd.
LandOfFree
Siloxane-based resin and a semiconductor interlayer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Siloxane-based resin and a semiconductor interlayer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Siloxane-based resin and a semiconductor interlayer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3573357