Silicone metalization

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S151000, C438S166000, C438S459000, C438S778000, C257SE21122, C257SE21567, C257SE21649

Reexamination Certificate

active

07462518

ABSTRACT:
A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

REFERENCES:
patent: 4557037 (1985-12-01), Hanoka et al.
patent: 5346850 (1994-09-01), Kaschmitter et al.
patent: 5395481 (1995-03-01), McCarthy
patent: 5399231 (1995-03-01), McCarthy
patent: 5414276 (1995-05-01), McCarthy
patent: 5817550 (1998-10-01), Carey et al.
patent: 6596569 (2003-07-01), Bao et al.
patent: 6949452 (2005-09-01), Hatano et al.
patent: 2003/0097166 (2003-05-01), Krulevitch et al.
patent: 2003/0203271 (2003-10-01), Morse et al.
patent: 2004/0121528 (2004-06-01), Krulevitch et al.
patent: 2004/0209396 (2004-10-01), Krulevitch et al.
Maghribi, M., et al., “Stretchable Micro-Electrode Array for Retinal Prothesis,” 2ndAnnual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine and Biology, May 2-4, 2002, Proceedings, 2002, Piscataway, NJ, pp. 80-83.

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