Silicon wafer steam oxidizing apparatus

Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure

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118715, 118719, 118724, 427 93, 4272554, H01L 21316

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active

043154794

ABSTRACT:
A high-pressure, high-temperature gaseous chemical apparatus particularly designed for oxidation of silicon wafers and providing for pressure equalization across the wall of the vessel providing the reaction chamber, for a water boiling enclosure within the reaction chamber and the injection of liquid water under pressure into the enclosure and for the continuous flow through of water vapor at high temperature and high pressure in the reaction chamber while maintaining the aforementioned pressure balance.

REFERENCES:
patent: 3446659 (1962-05-01), Wisman et al.
patent: 3573974 (1971-04-01), Castrucci et al.
patent: 3661117 (1972-05-01), Cornelius et al.
patent: 4018184 (1977-04-01), Nagasawa et al.
patent: 4167915 (1979-09-01), Toole et al.
patent: 4275094 (1981-06-01), Takagi et al.
"Oxidation of Silicon by High Pressure Steam" Ligenza, pp. 73-76, Journal of the Electro-Chemical Society, Feb. 1962.
"High Pressure Steam Apparatus, for the Accelerated Oxidation of Silcon" Panousis et al., Abst. #53, Spring Meeting of Electro-Chemical Soc., May 13-18, 1973.
"Low Temperature, High Pressure Steam Oxidation of Silicon, " Katz et al., Journal Electrochemical Soc.: Solid State Science & Tech., p. 1822, 10-1979
"Selective Oxidation of Silcon in Low Temperature High-Pressure Steam", Powell et al., IEEE Transactions on Electrical Devices, vol. ED-21 #10, Oct. 1974.

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