Silicon wafer production process and silicon wafer

Details Silicon wafer production process and silicon wafer Silicon wafer production process and silicon wafer

2006-06-27

2006-06-27

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S003000, C117S089000

Reexamination Certificate

active

07067005

ABSTRACT:
This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.

REFERENCES:
patent: 6743289 (2004-06-01), Falster et al.
patent: 110135514 (1999-05-01), None

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