Silicon wafer manufacturing method eliminating final mirror-poli

Details Silicon wafer manufacturing method eliminating final mirror-poli Silicon wafer manufacturing method eliminating final mirror-poli

1996-03-22

1998-04-28

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438706, 438715, H01L 2100

Patent

active

057444013

ABSTRACT:
A silicon wafer is mirror-polished until obtaining surface roughness Ra of 0.70-1.00 nm, Rq of 0.80-1.10 nm, or Rt of 4.50-7.00 nm. The resulting wafer is heat-treated at a temperature not lower than 1,200.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere. According to another aspect, a silicon wafer is mirror-polished until obtaining surface roughness values Ra' of 0.08-0.70 nm, rms of 0.10-0.90 nm, and P-V of 0.80-5.80 nm in a square area of 90 .mu.m by 90 .mu.m, and surface roughness values Ra' of 0.13-0.40 nm, rms of 0.18-0.50 nm, and P-V of 1.30-2.50 nm in a square area of 500 nm by 500 nm. The resulting wafer is heat-treated at 1,100.degree.-1,300.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere.

REFERENCES:
patent: 5571373 (1996-11-01), Krishna et al.

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