Silicon wafer including amorphous silicon layer formed by PCVD a

Details Silicon wafer including amorphous silicon layer formed by PCVD a Silicon wafer including amorphous silicon layer formed by PCVD a

1997-03-24

1999-10-19

Dutton, Brian

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438977, H01L 2130, H01L 2146

Patent

active

059703652

ABSTRACT:
A silicon wafer has an amorphous silicon layer formed on one main surface thereof. The amorphous silicon layer is formed by plasma chemical vapor deposition. The silicon wafer has a gettering layer that possesses high gettering capability and enhanced continuance of the gettering capability. Moreover, the stress acting on the silicon wafer due to the gettering layer is reduced so that the warpage of the silicon wafer decreases. The silicon wafer can be manufactured with high productivity.

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patent: 4692345 (1987-09-01), Nishiura et al.
patent: 5327007 (1994-07-01), Imura et al.
patent: 5374842 (1994-12-01), Kusakabe
patent: 5449532 (1995-09-01), Toyokawa
patent: 5757063 (1998-05-01), Tomita et al.

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